1-2.Basic_Device

MOS Structuroe

PMOS

Second-Order Effect

Body Effect

  • $V_B \downarrow, Q_d \uparrow \Longrightarrow V_{TH} \uparrow$

Channal Length Modulation

$$ \begin{equation} r_o = \frac{ 1 }{ \lambda I_D } \end{equation} $$

Subthreshold Conduction

$$ \begin{equation} \begin{aligned} g_{mb} &= \frac{ \partial I_D }{ \partial V_{SB} } \\ &= k_n V_{OV} ( - \frac{ \partial V_{TH} }{ V_{BS} }) \\ &= \eta g_m \end{aligned} \end{equation} $$

MOS Capacitances

Licensed under CC BY-NC-SA 4.0
comments powered by Disqus
Built with Hugo
Theme Stack designed by Jimmy